Plasmatherm 73/74
AMERICA North (USA-Canada-Mexico)
Wafer Size Range
Maximum 200 mm
Process PECVD/Plasma Etch/Reactive Ion Etch
Controller Type Microprocessor Controller Type
Interface I/O Port
Roughing Pump RUVAC WSU 251
Number of Gas Inputs Eight Gas
Other Information System Features:
RF Plasma RF-5 generator
MKS Type 252A exhaust valve controller
Watlow Series 808 electric heater control
RF Plasma AM-5 Automatching network (700)
Leybold WSU251/D65BCS roots pumping system
Tek-Temp TKD100/4000 chiller
Brooks 5850E Mass Flow Controllers:
Etch: N2(100 sccm),CHF3(200 sccm), Cl2(100 sccm), BCl3(100 sccm)
Dep: N2(2000 sccm),N2(2000 sccm),N2(2000 sccm), NH3(sccm)
Exterior Dimensions
Width 47.000 in (119.4 cm)
Depth 39.000 in (99.1 cm)
Height 66.000 in (167.6 cm)