KLA-Tencor F5X

The ASET-F5x thin film metrology system can
measure materials across a continuous wavelength
spectrum from 190 nm to 800 nm—a critical feature for
meeting the stringent thin film measurement
requirements down to 0.1 micron geometries.

Accurate measurements of complex multi-layer thin
film stacks using spectroscopic ellipsometry (SE)
Precisely measures advanced, ultra-thin gate dielectric films
Develops and optimizes thin film dispersion models offline
Provides the thin film measurement accuracy, repeatability, and system-to-system matching required to monitor advanced ICs with geometries as small as 0.1 micron
Provides critical measurements for thin film deposition, CMP, lithography, and etch applications
Capable of measuring wafer bow wafer stress
Application

Diffusion Thin Films/Film Deposition: Complete diffusion thin film solution in single-wavelength ellipsometry (SWE) and SE technologies. SE and dual-beam spectrophotometry (DBS) measurement capabilities cover a wide range of
thin film thicknesses and indices with a single recipe.

CMP: Unique capability to determine transparent thin
film thickness on a metal array.
Best-in-class robust pattern recognition and
auto model select features are an added advantage for
accurate and fast model recognition,
especially for CMP processes.

Lithography: SE and DUV spectrometry technologies
determine critical lithography measurements
including photoresist and BARC
(bottom anti-reflective coating) thickness.

Etch: SE technology has the capability to
compensate for surface roughness,
which enables more accurate and precise refractive index (RI)
measurement for etch to thin films.
SE also allows precise and stable measurements of
top layer thin film for etch to clear films.