Steag Heatpulse 610

Steag (AG Associates) Heatpulse 610 RTP Rapid Thermal Processing System.
Manually loaded and capable of processing silicon and III-V substrates
up to 150mm in diameter, Heatpulse 610 provides solutions
to your process development and monitoring needs.
Benchtop system for rapid thermal processing of semiconductor wafers up
to 6” dia. max. (Depends on wafer tray with system).

Performance Specifications
Recommended Steady State Temperature Range: 400-1250° C.
Steady-State Temperature Stability: ± 2° C.
Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP),
used throughout the recommended temperature range, or a thermocouple,
used for process temperatures below 400° C.
Heating Rate: 1-200° C per second, user-controllable.
Cooling Rate: Temperature dependent; max 150° C per second.
Maximum Non-uniformity:
±5°C across a 6″ (150mm) wafer at 1150°C.
(This is a one sigma deviation 100 angstrom oxide.)
For a titanium silicidation process, no more than 4% increase
in non-uniformity during the first anneal at 650°C to 700 °C.
Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C
for 10 seconds. R&D models optimized for slip control.
Implant: As 1E16 50 KeV with implant uniformity ≤0.3%