Shibaura CDE -80

Dry Etcher
Version: 200 mm
De-installed from working condition and warehoused.
Please refer to the attached photos to see the condition.
Can be inspected by appointment.

Parts included:-
-Main body.
-SMIF Loader
-Controller
-CRT
-Keyboard
-Through the wall config.
-SUS Front panel
-Al Side panel: Ni Coated
-Pump interface

Gas system:
(5) MFC Tylan FC-2900 CF4, C12, N2, 02, NF3
Quartz tube protection
C mictube
ESC Universal chuck,
8" Water auxiliaries

This isotropic etching system applicable to
wafers of diameter 75 mm to 300 mm has
been favoured by customers for many years.
While having many achievements for
round etching including Si and SiO2,
recently this system has also been used for
the improvement of device properties by
using its remote plasma feature.
Its plasma damage-free technology contributes to
the designing of high-quality devices.

Features
・Isotropic etching
By generating plasma outside of the chamber and
performing the etching processing with
radical compounds only, this system is capable of
perfect isotropic etching processing.
This system is applied for round processing for
trench pattern opening sections.
・Plasma damage-free feature
Due to the long distance from a plasma to a wafer,
the ion generated within the plasma is deactivated and
does not impact the wafer.
This feature is applied to removal of damaged layers after
RIE processing.